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SiCqurTech reunites the leading partners in silicon carbide materials growth, device technology and quantum applications.

 

Partner

Principal Investigator

   Description

     Florian Kaiser

  • Project coordination.
     
  • Experimental development of a high-throughput cryo-optic measurement station for
    surface passivation and SiC-on-insulator.
     
  • Photon-mediated entanglement generation between colour centres on a SiC chip.

     Jawad Ul-Hassan

  • Growth of quantum grade isotopically pure 4H-
    28Si12C.
     
  • Development of a novel 4H-SiC material with controlled isotopic engineering of
    28Si, 29Si, 12C, and 13C.
     
  • Development of a new method to achieve quantum grade SiC-on-insulator through electrochemical etching.

     Ulrike Grossner

  • Development of an initial surface passivation enabling low-noise spectrally stable VSi
    centres within 1D waveguides suitable for SiC-on-insulator bonding.
     
  • Support the transfer and scaling of novel insulator layers towards industrial scale
    application.
     
  • Develop a link between traditional opto-electronic SiC-insulator characterisation
    techniques with the high-throughput cryo-optic measurements developed by LIST.

     Tim Taminiau

  • Lead the development of the spin-qubit control and readout development.
     
  • Support the photon-mediated entanglement between spin qubits.
     
  • Support the development of SiC with controlled isotopic concentrations through
    Characterisation.

     Julietta Förthner

  • Design, device technology, and characterisation of electronic components for SiC
    quantum photonic integrated circuits.
     
  • Formation of colour centres by ion implantation.
     
  • Wavelength stabilisation and charge control of colour centres.