The SiCqurTech project aims to develop a radically new approach towards solid state Quantum Technology engineering.

It focuses on vacancy-related colour centres in silicon carbide, the industry’s leading third-generation semi- conductor, to overcome one of today’s main challenges in Quantum Technology – the lack of fab-ready and CMOS-inspired quantum device fabrication techniques.

SiCqurTech will integrate colour centres in silicon carbide photonic chips and benchmark their performance for application in quantum communication networks. In order to make this technology viable for market-up-take, the project team will focus on quantum-grade fabrication techniques that provide a clear pathway
for cost-effective scaling to accommodate hundreds to thousands of devices in the future.

SiCqurTech brings together an interdisciplinary European consortium that will:

• explore the growth of novel quantum-grade silicon-carbide material with controlled isotopic concentrations
• develop a fab-compatible silicon-carbide-on-insulator technology and electrical control structures via high-throughput sample characterisation
• investigate industry-compatible surface modification techniques to further improve the spin-optical coherence of colour centres
• demonstrate multi-qubit control and photon-mediated entanglement

SiCqurTech’s results will create a comprehensive fundamental and practical understanding of the potential of the colour centres in silicon-carbide. This next-generation Quantum Technology has the potential for establishing an all-European supply chain.